Radio frequency power amplifying module with hetero junction bipolar transistor

• 1. 具有异质结双极晶体管的射频功率放大模块 [P] . 中国专利： CN101026360A . 2007-08-29
• 2. 功率控制电路及具有功率控制电路的射频功率放大器模块 [P] . 中国专利： CN102347732B . 2014.05.14
• 3. RADIO FREQUENCY POWER AMPLIFYING MODULE WITH HETERO JUNCTION BIPOLAR TRANSISTOR [P] . 美国专利： US2007194852A1 . 2007-08-23

  机译： 具有异质结双极晶体管的射频功率放大器模块

• 4. Method of fabrication of an Integrated circuit used mainly for radio-frequency applications, has bipolar transistors especially of the hetero-junction type, and insulated gate field effect transistors [P] . 法国专利： FR2835652A1 . 2003-08-08

  机译： 主要用于射频应用的集成电路的制造方法具有特别是异质结型的双极晶体管和绝缘栅场效应晶体管

• 5. Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications [P] . 美国专利： US2007001195A1 . 2007-01-04

  机译： 用于功率放大应用的双异质结双极晶体管的集电极层结构

• 1. Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering [J] . Naidan Miao, Peipei Liu, Jianhao Wen, 应用数学与应用物理（英文） . 2020,第002期
• 2. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers [J] . 半导体光子学与技术（英文版） . 2003,第002期
• 3. Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors [J] . Cheng-Chou Hung, Wen-Shiang Liao, Sheng-Yi Huang, Japanese journal of applied physics . 2008,第42期
• 4. Discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes???????? before a joint meeting of the Radio and Measurements Sections, 11th May, 1955 [J] . Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1955,第6期
• 5. HETERO JUNCTION BIPOLAR TRANSISTOR-BASED CASCODE AMPLIFIER WITH HIGH-FREQUENCY LOSS COMPENSATION NETWORK [J] . Rong Wang, Huai Gao, Aroonchat Chatchaikarn, Microwave and optical technology letters . 2009,第10期
• 6. Modelling the correlation in the high-frequency noise of (hetero-junction) bipolar transistors using charge-partitioning [C] . Paasschens, J.C.J., Havens, . 2003
• 7. Low -frequency noise in silicon -germanium hetero-junction bipolar transistor BiCMOS technology. [D] . Jin, Zhenrong. 2004
• 8. Tribotronic bipolar junction transistor for mechanical frequency monitoring and use as touch switch [O] . Fengben Xi, Yaokun Pang, Wenjian Li, 2018
• 9. Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature [O] . Bo-Ying Liu, Gao-Sheng Wang, Ming-Lang Tseng, 2018

• 1. Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser [J] . Mohammad Reza Farjadian ,Hassan Kaatuzian ,Iman Taghavi . 光学与光子学期刊（英文） . 2013,第2期
• 2. High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers [J] . Ma Zhenqiang ,Wang Guogong ,Jiang Ningyue . 半导体学报：英文版 . 2006,第2期
• 3. Advanced Power Module Packaging and Integration Structures for High Frequency Power Conversion: From Silicon to GaN [J] . Fang LUO ,Lin LIANG ,David Huitink . 电力电子技术 . 2018,第008期
• 4. 具有SiGe异质结双极晶体管的新型IGBT器件 [C] . Li Qi ,李琦 ,Zhang Zhaoyang . 第十八届全国化合物半导体、微波器件和光电器件学术会议 . -1
• 5. 射频功率放大器模块设计 [A] . 王方园 . 2012