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Method of fabricating semiconductor devices with a multi-role facilitation layer

机译：具有多角色促进层的半导体器件的制造方法

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摘要

A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer (200, 201) and an adjacent layer of Al_xIn_yGa_1-x-yN layer (202). The Al_xIn_yGa_1-x-yN layer (202) acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (200, 201). The high refractive index contrast permits in-situ optical monitoring. The extra layer (202) can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process.

机译：一种在铟，铝，氮化镓（InAlGaN）材料系统中生长半导体材料的方法，以及一种由其制成的器件的生长方法，尤其是在可见光谱的紫外至绿色区域中的光学器件。某些光学器件，例如垂直腔表面发射激光器（VCSEL），要求某些半导体层的厚度具有很高的精度。本发明的一方面提供了富镓的III族氮化物层（ 200、201 ）和相邻的Al _{x In _{y 层。 Ga _{1-xy N层（ 202 ）。 Al _{x In _{y Ga _{1-xy N层（ 202 ）用作制造促进层，并且选择与富镓的第III族氮化物层（ 200，201 ）提供良好的晶格匹配和高折射率对比。高折射率对比允许原位光学监控。额外的层（ 202 ）可以在后续处理中用作蚀刻标记或蚀刻停止层，并且可以在剥离工艺中使用。}}}}}} 展开▼

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公开/公告号US7566579B2

专利类型

公开/公告日2009-07-28

原文格式PDF

申请/专利权人 IAN MICHAEL WATSON;MARTIN DAWSON;ERDAN GU;ROBERT WILLIAM MARTIN;PAUL ROGER EDWARDS;
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申请/专利号US20050719125

发明设计人 ROBERT WILLIAM MARTIN;MARTIN DAWSON;ERDAN GU;IAN MICHAEL WATSON;PAUL ROGER EDWARDS;
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申请日2005-11-04

分类号H01L21/00;

国家 US

入库时间 2022-08-21 19:31:10

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