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Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches
Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches
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机译：顺序热退火方法从硅基纳米晶体中发光
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摘要
A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.
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机译：一种增强光致发光的方法，包括提供设置在基板上的膜，该膜包括半导体和介电材料中的至少一种。当使用SiO 2 和SiN x 或富硅氧化物的薄膜层时，可以通过热退火后生长处理来激活发光。在处理室或退火炉中在第一温度下执行第一退火步骤;然后，在处理室或退火炉中在第二温度下进行第二退火步骤。第二温度大于第一温度，并且第二退火步骤之后的膜的光致发光大于没有第一退火步骤的膜的光致发光。
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