STRUCTURES AND METHODS OF FORMING SIGE AND SIGEC BURIED LAYER FOR SOI/SIGE TECHNOLOGY

• 1. 与作为蚀刻停止的SiGeC层接合的半导体结构 [P] . 中国专利： CN106104749A . 2016-11-09
• 2. 一种垂直交叉堆叠栅应变SiGeC量子阱沟道CMOS器件结构 [P] . 中国专利： CN102208415B . 2013.04.24
• 3. Structures and methods of forming SiGe and SiGeC buried layer for SOI/SiGe technology [P] . 美国专利： US8138579B2 . 2012-03-20

  机译： 用于SOI / SiGe技术的形成SiGe和SiGeC掩埋层的结构和方法

• 4. STRUCTURES AND METHODS OF FORMING SIGE AND SIGEC BURIED LAYER FOR SOI/SIGE TECHNOLOGY [P] . 美国专利： US2011227130A1 . 2011-09-22

  机译： SOI / SIGE技术形成SIGE和SIGEC埋层的结构和方法

• 5. STRUCTURES AND METHODS OF FORMING SIGE AND SIGEC BURIED LAYER FOR SOI/SIGE TECHNOLOGY [P] . 美国专利： US2009001414A1 . 2009-01-01

  机译： SOI / SIGE技术形成SIGE和SIGEC埋层的结构和方法

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• 3. Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers [J] . V. I. Vdovin, T. A. Torack, Lu Fei, Physica status solidi . 2007,第8期
• 4. Effect of doping profile on the potential performance of buried channel SiGeC/Si heterostructure MOS devices [J] . Cassan E., Dollfus P., Galdin S. Physica, E. Low-dimensional systems & nanostructures . 2002,第2a4期
• 5. Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers [J] . J. Hallstedt, E. Suvar, C. Menon Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2004,第1a3期
• 6. Microstructural studies of Co silicide layers formed on SiGe and SiGeC [C] . S.Jin, H.Bender, R.A.Donaton, Symposium on structure and evolution of surface . 1997
• 7. Methodischer Festigkeitsnachweis von Bauteilen unter Berücksichtigung lokaler H?rte und Einbauspiel am Beispiel formschlüssiger Kupplungen =Methodical Strength Assessment of Interlocking Couplings Considering Local Hardness and Clearance [D] . Fürst, Thomas. 2019
• 8. Ion-Beam-Induced Atomic Mixing in Ge Si and SiGe Studied by Means of Isotope Multilayer Structures [O] . Manuel Radek, Bartosz Liedke, Bernd Schmidt, 2017
• 9. SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100) [O] . Im S., Song J. H., Lie D. Y. C., 1997

• 1. 基于电子温度效应的SiGe、SiGeC异质结晶体管的基区渡越时间模型 [J] . 高树钦 ,李壵 . 中国科学技术大学学报 . 2010,第002期
• 2. SiGe和SiGeC HBT速度过冲模型 [J] . 蔡瑞仁 ,李垚 . 微电子学 . 2007,第3期
• 3. Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology [J] . 王斌 ,张鹤鸣 ,胡辉勇 . 中南大学学报 . 2014,第006期
• 4. Si/SiGe/Si-SOI异质结构中位错偶极子的高分辨像 [C] . 马通达 ,刘安生 ,邵贝羚 . 2010年全国电子显微学会议暨第八届海峡两岸电子显微学研讨会 . 2010
• 5. SiGeC/Si功率二极管新结构的研究与特性分析 [A] . 刘静 . 2006