Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress

• 1. 混凝土单轴受压应力的应变全曲线测量装置 [P] . 中国专利： CN207300737U . 2018-05-01
• 2. 混凝土长期恒定单轴压应力加载仪 [P] . 中国专利： CN2879166Y . 2007.03.14
• 3. Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress [P] . 美国专利： US7470972B2 . 2008-12-30

  机译： 利用单轴压应力和双轴压应力的互补金属氧化物半导体集成电路

• 4. COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT USING UNIAXIAL COMPRESSIVE STRESS AND BIAXIAL COMPRESSIVE STRESS [P] . 世界知识产权组织专利： WO2006099198A1 . 2006-09-21

  机译： 单轴压缩应力和双轴压缩应力的互补金属氧化物半导体集成电路

• 5. Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress [P] . 美国专利： US2006205167A1 . 2006-09-14

  机译： 利用单轴压应力和双轴压应力的互补金属氧化物半导体集成电路

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• 6. Low-Frequency Noise Characteristics of SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Compressive lnterlayer-Dielectric-SiN_x Stressing Layer [J] . Yu-Ting Chen, Kun-Ming Chen, Wen-Shiang Liao, Japanese journal of applied physics . 2009,第4issue2期
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• 8. Scanning tunneling microscopy studies of growth medium & temperature dependent structural phases of alkanethiol self-assembled monolayers, reactive self-assembled monolayers, & flat gold nanoparticle/indium tin oxide substrates and a scanning surface photovoltage microscopy study for local mechanical stress characterization in complementary metal oxide semiconductor devices. [D] . Dahanayaka, Dahanayaka Liyanage Daminda Hemal. 2010
• 9. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit [O] . Kazuo Nakazato -1
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• 4. 单轴及双轴受压应力状态下RPC材料的塑性损伤分析 [A] . 朱海燕 . 2008