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Method For Applying Selectively A Layer To A Structured Substrate By The Usage Of A Temperature Gradient In The Substrate

机译：利用衬底中的温度梯度选择性地将层施加到结构化衬底上的方法

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摘要

A semiconductor wafer (10) is structured such that fine structures (3), such as membranes, bridges or tongues, with a thickness dD are formed, wherein D designates the thickness of the semiconductor wafer (10). Then particles of a desired material are applied. A temporal or spatial temperature gradient is generated in the semiconductor wafer (10), e.g. by progressive heating. In such a heating process the fine structures heat up more quickly and become hotter than the remaining wafer because they have a smaller heat capacity per area and cannot carry off heat as quickly. In this manner, the fine structures can be heated to a temperature that allows a sintering of the particles. For coating the semiconductor wafer (10) is brought into a reactor (11). A precursor compound of a metal is provided and fed to the reactor (11), where a reaction takes place during which the metal is transformed to a final compound and is deposited in the form of particles on the semiconductor wafer (10).

机译：构造半导体晶片（ 10 ），使得形成厚度为d D的精细结构（ 3 ），例如膜，桥或舌片，其中D指定半导体晶片的厚度（ 10 ）。然后，施加所需材料的颗粒。例如，在半导体晶片（ 10 ）中产生时间或空间温度梯度。通过逐步加热。在这种加热过程中，细微结构比剩余的晶片更快地加热并变得更热，因为它们每单位面积的热容较小并且无法迅速散发热量。以这种方式，可以将精细结构加热到允许颗粒烧结的温度。为了涂覆，将半导体晶片（ 10 ）放入反应器（ 11 ）中。提供金属的前体化合物并将其进料到反应器（ 11 ）中，在该反应器中发生反应，在此过程中金属转化为最终化合物，并以颗粒形式沉积在半导体上晶片（ 10 ）。 展开▼

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公开/公告号US2009239371A1

专利类型

公开/公告日2009-09-24

原文格式PDF

申请/专利权人 FELIX MAYER;CHRISTOPH KLEINLOGEL;
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申请/专利号US20050791549

发明设计人 FELIX MAYER;CHRISTOPH KLEINLOGEL;
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申请日2005-11-23

分类号H01L21/283;H01L21/26;H01L21/30;

国家 US

入库时间 2022-08-21 19:36:10

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