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HETERO-JUNCTION CONTAINING MAGNESIUM NITRIDE NANO WIRE AND GALLIUM NANO WIRE THIN-WALL COVERED WITH GRAPHITIC CARBON NANO TUBE CONTENT
HETERO-JUNCTION CONTAINING MAGNESIUM NITRIDE NANO WIRE AND GALLIUM NANO WIRE THIN-WALL COVERED WITH GRAPHITIC CARBON NANO TUBE CONTENT
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机译：含石墨碳纳米管含量的氮化镁纳米线和镓纳米线异质结薄壁涂层
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摘要
PROBLEM TO BE SOLVED: To provide a hetero-junction containing manufacturing method of a Mg3N2 (semiconductor) nano wire and a Ga (metal) nano wire, which are covered with a thin-wall graphitic carbon nano tube.;SOLUTION: The hetero-junction containing Mg3N2 (semiconductor) nano wire and the Ga (metal) nano wire which are covered with the graphitic carbon nano tube (GCNTs) are manufactured through a following process. (1) Ga2O3, active carbon and MgB2 powder are mixed. (2) The mixture is put in a crucible in the center of a furnace which is composed of a fused quartz tube and an induction heating cylindrical tube formed of high purity graphite which is coated with a carbon fiber heat insulation layer, and has two entrances at a top and a base. (3) Pressure is reduced in the fused quartz tube and the induction heating cylindrical tube. (4) Pure nitrogen gas is introduced by the ambient pressure of the furnace at a constant flow velocity through the two entrances. (5) The crucible is heated to about 1,400°C and maintained at this temperature. (6) The crucible is cooled to room temperature. (7) Production objects are collected from the heat insulation layer near the top.;COPYRIGHT: (C)2009,JPO&INPIT
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机译：解决的问题：提供一种包含异质结的Mg 3 N 2 （半导体）纳米线和Ga（金属）纳米线的制造方法解决方案：异质结包含Mg 3 N 2 （半导体）纳米线和Ga（金属）纳米线通过以下工艺制造被石墨碳纳米管（GCNT）覆盖的碳纳米管。 （1）将Ga 2 O 3 ，活性炭和MgB 2 粉末混合。 （2）将混合物置于坩埚中部的熔炉中心，该熔炉由熔融石英管和由高纯度石墨制成的感应加热圆筒管组成，并涂覆有碳纤维隔热层，并具有两个入口在顶部和底部。 （3）降低熔融石英管和感应加热圆柱管中的压力。 （4）纯氮气由炉子的环境压力以恒定的流速通过两个入口引入。 （5）将坩埚加热至约1,400℃并保持在该温度。 （6）将坩埚冷却至室温。 （7）从顶部附近的隔热层收集生产对象。版权所有：（C）2009，日本特许厅＆INPIT
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