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METHOD FOR MEASURING LEVEL OF LIQUID SURFACE IN APPARATUS FOR PULLING SINGLE CRYSTAL BY CZ METHOD

机译:CZ法测定单晶结晶仪中液面含量的方法

摘要

PPROBLEM TO BE SOLVED: To provide a method for easily and accurately measuring the level of a liquid surface by selecting the most suitable reflection method from a plurality of reflection methods according to the growing condition of a pulled single crystal. PSOLUTION: In this method, a plurality of methods different in measuring the level of a liquid surface are set and information correlating the specified position existing between a thermal shield body and the outer circumferential surface of a single crystal and the space between the thermal shield body and the outer circumferential surface of the single crystal is obtained in advance. A space is decided according to the manufacturing condition and a measuring method corresponding to the decided space is selected from the information. The level of the liquid surface of the melt is measured by the selected measuring method. PCOPYRIGHT: (C)2009,JPO&INPIT
机译:<解决的问题:提供一种通过根据拉出的单晶的生长条件从多种反射方法中选择最合适的反射方法来容易且准确地测量液体表面的液位的方法。

解决方案:在该方法中,设置了在测量液面高度方面不同的多种方法,并且将与热屏蔽体和单晶的外周面之间存在的指定位置以及液晶之间的空间相关联的信息。预先获得热屏蔽体和单晶的外周面。根据制造条件确定空间,并从该信息中选择与确定的空间相对应的测量方法。熔体的液面高度通过所选的测量方法进行测量。

版权:(C)2009,日本特许厅&INPIT

著录项

  • 公开/公告号JP2009051685A

    专利类型

  • 公开/公告日2009-03-12

    原文格式PDF

  • 申请/专利权人 SUMCO TECHXIV CORP;

    申请/专利号JP20070218409

  • 申请日2007-08-24

  • 分类号C30B29/06;C30B15/26;

  • 国家 JP

  • 入库时间 2022-08-21 19:45:39

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