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Silicon on insulator type mixed micro-technological structure manufacturing method for e.g. sensor, involves removing sacrificial layer to expose surface of mixed layer, and forming covering layer on surface by direct bonding
Silicon on insulator type mixed micro-technological structure manufacturing method for e.g. sensor, involves removing sacrificial layer to expose surface of mixed layer, and forming covering layer on surface by direct bonding
The method involves forming a temporary substrate having a mixed layer (15) adjacent to a sacrificial layer (2) and contact studs (1A, 1B) of different materials, where the sacrificial layer is made of nitride and stud (1B) is made of silicon dioxide. The sacrificial layer is removed to expose a mixed surface of the mixed layer, where the surface has portions of the studs. A continuous covering layer is formed on the surface by direct bonding, where the continuous layer and one of the studs contain different doping. A planarization layer made of polycrystalline is formed on the surface. An independent claim is also included for a mixed micro-technological structure comprising a support substrate.
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