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Method of float glass manufacture for thin film transistor displays, suppresses surface defects by application of controlled, reverse electric current

机译:用于薄膜晶体管显示器的浮法玻璃的制造方法,通过施加受控的反向电流来抑制表面缺陷

摘要

A critical electrical direct current (Ik) is measured in the glass melt (2). An opposing current (Ig) of the same magnitude is produced between the metal bath (33) and the glass melt (2) in the melt tank (10) or conditioning unit (20). The critical current is measured between two metal components (34, 35) contacting the melt in the melt tank and/or conditioning unit. The critical voltage and the electrical resistance (R) of the glass melt are measured between the components (34, 35), to determine the critical direct current. To measure the critical voltage, the standard potential is measured between the components, using a standard, non-earthed glass melt. The actual voltage is measured between the components, in the glass melt. This is then corrected for voltage produced by the Seebeck effect, using the specific Seebeck effect coefficient and the temperature difference between the components.(34, 35). All measured potentials are determined relative to a reference electrode. This comprises ZrO2/platinum, tungsten/tungsten oxide or molybdenum/molybdenum oxide. The resistance R is obtained by impedance spectroscopy. The corrected voltage (U'm) is measured continuously. It is measured in the glass melt between the melt tank and the float bath unit. To produce the opposed current, an opposite voltage of 0.01-10 V is applied to electrodes (41, 42). An independent claim IS INCLUDED FOR corresponding equipment.
机译:在玻璃熔体(2)中测量了临界直流电(Ik)。在熔池(10)或调节单元(20)中的金属熔池(33)和玻璃熔体(2)之间产生相同大小的反向电流(Ig)。临界电流是在两个金属部件(34、35)之间接触的,该两个金属部件在熔池和/或调节单元中与熔体接触。在组件(34、35)之间测量玻璃熔体的临界电压和电阻(R),以确定临界直流电。为了测量临界电压,使用标准的非接地玻璃熔体测量组件之间的标准电势。在玻璃熔体中测量组件之间的实际电压。然后使用特定的塞贝克效应系数和组件之间的温差校正由塞贝克效应产生的电压(34,35)。相对于参比电极确定所有测得的电势。这包括ZrO 2 /铂,钨/氧化钨或钼/氧化钼。电阻R通过阻抗光谱法获得。连续测量校正后的电压(U'm)。在熔池和浮法熔池之间的玻璃熔体中测量。为了产生反向电流,向电极(41、42)施加0.01-10V的反向电压。相应设备包括独立索赔。

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