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Semiconductor component i.e. MOSFET, has semiconductor body comprising p-doped body-zone and contact zone that is doped stronger than body zone and strongly n-doped source-zone arranged between front side of component and contact zone
Semiconductor component i.e. MOSFET, has semiconductor body comprising p-doped body-zone and contact zone that is doped stronger than body zone and strongly n-doped source-zone arranged between front side of component and contact zone
The component has a semiconductor body (1) made from semiconductor material e.g. silicon, and comprising a p-doped body-zone (29) and a contact zone (28) that is doped stronger than the body zone. The body has a strongly n-doped source-zone (24) that is arranged between a front side of the component and the contact zone in a vertical direction of the component, where the source and contact zones are arranged at a distance from each other. A source-metallization (30) is provided on a side turned away from a drain-zone for contacting the source-zone and the contact zone. An independent claim is also included for a method for manufacturing a semiconductor component.
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