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Light emitting diode semiconductor body for radiation-emitting component and for applications of projection, has radiation generating active layers and photonic crystal
Light emitting diode semiconductor body for radiation-emitting component and for applications of projection, has radiation generating active layers and photonic crystal
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机译：用于发射辐射的部件和用于投影的发光二极管半导体本体具有产生辐射的有源层和光子晶体
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摘要
The light emitting diode semiconductor body (1) has a radiation generating active layers (31,32) and a photonic crystal (6). The photonic crystal has a number of areas (6a) with a refractive index and another number of areas (6b) with another refractive index. The reflection layer contains materials like aluminum, zinc and silver, a transparent conductive oxide, silicon nitride. The semiconductor body, particularly one of the two active layers or both active layers, containing compound consist of aluminium, gallium, indium, phosphorus, arsenic and nitrogen.
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