首页> 外国专利> Device for crystallizing an amorphous silicon layer on a substrate, for the production of liquid crystal display, comprises an excimer laser, a mask, an imaging objective for imaging the mask on the substrate and a deflector for laser ray

Device for crystallizing an amorphous silicon layer on a substrate, for the production of liquid crystal display, comprises an excimer laser, a mask, an imaging objective for imaging the mask on the substrate and a deflector for laser ray

机译：用于使衬底上的非晶硅层结晶的用于制造液晶显示器的装置包括准分子激光器，掩模，用于将掩模成像在衬底上的成像物镜和用于激光的偏转器

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摘要

The device for crystallizing an amorphous silicon layer introduced on a substrate (7), for the production of liquid crystal display, comprises an excimer-laser with a wavelength of 308 nm, a mask (2), an imaging objective (6) for imaging the mask on the substrate and a deflector for laser ray (1) in optical path towards the mask. The mask has a glass plate that is provided on the side turned away from the laser with a layer forming the mask structure. The mask on the side turned towards the laser and the side turned from the laser is equipped with an antireflex-layer. The device for crystallizing an amorphous silicon layer introduced on a substrate (7), for the production of liquid crystal display, comprises an excimer-laser with a wavelength of 308 nm, a mask (2), an imaging objective (6) for imaging the mask on the substrate and a deflector for laser ray (1) in optical path towards the mask. The mask has a glass plate that is provided on the side turned away from the laser with a layer forming the mask structure. The mask on the side turned towards the laser and the side turned from the laser is equipped with an antireflex-layer. The layer forming the mask structure has a reflection degree of higher than 75% related to the wavelength of 308 nm. The ray is homogenized and formed against the mask. The reflection degree of the layer forming the mask structure on the side turned towards the laser amounts to a multiple of the reflection degree on the side turned away from the laser.

机译：用于使引入到基板（7）上的非晶硅层结晶的装置，用于制造液晶显示器，该装置包括波长为308nm的准分子激光，掩模（2），用于成像的成像物镜（6）。基板上的掩模和朝向掩模的光路中的激光偏转器（1）。掩模具有玻璃板，该玻璃板在背离激光器的一侧设置有形成掩模结构的层。朝向激光的一侧和朝向激光的一侧的掩模配备有抗反射层。用于使引入到基板（7）上的非晶硅层结晶的装置，用于制造液晶显示器，该装置包括波长为308nm的准分子激光，掩模（2），用于成像的成像物镜（6）。基板上的掩模和朝向掩模的光路中的激光偏转器（1）。掩模具有玻璃板，该玻璃板在背离激光器的一侧设置有形成掩模结构的层。朝向激光的一侧和朝向激光的一侧的掩模配备有抗反射层。形成掩模结构的层相对于308nm的波长具有高于75％的反射率。射线被均匀化并靠着掩模形成。在朝向激光器的一侧上形成掩模结构的层的反射度等于远离激光器的一侧上的反射度的倍数。

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公开/公告号DE102006028243A1

专利类型
公开/公告日2007-12-27

原文格式PDF
申请/专利权人 COHERENT GMBH;
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申请/专利号DE20061028243
发明设计人 SIMON FRANK;
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申请日2006-06-20
分类号C30B13/06;C30B28/08;C30B29/06;
国家 DE
入库时间 2022-08-21 19:49:52

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