首页> 外国专利> NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THE NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THIN-FILM TRANSISTOR, FIELD-EFFECT TRANSISTOR, LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET

NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THE NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THIN-FILM TRANSISTOR, FIELD-EFFECT TRANSISTOR, LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET

机译：氧化铌薄膜半导体薄膜，生产薄膜的工艺，薄膜晶体管生产，场效应晶体管，发光器件，显示设备和点光源的过程

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摘要

This invention provides, for example, a noncrystalline oxide semiconductor thin film, which is insoluble in a phosphoric acid-type etching liquid and is soluble in an oxalic acid-type etching liquid by optimizing the amounts of indium, tin, and zinc, and a process for producing the noncrystalline oxide semiconductor thin film. An image display device (1) comprises a glass substrate (10), a liquid crystal (40) as a light control element, a bottom gate-type thin-film transistor (1), for driving the liquid crystal (40), a pixel electrode (30), and a counter electrode (50). A noncrystalline oxide semiconductor thin film (2) in the bottom gate-type thin-film transistor (1) has a carrier density of less than 10+18 cm-3, is insoluble in a phosphoric acid-type etching liquid, and is soluble in an oxalic acid-type etching liquid.

机译：本发明提供例如非晶态氧化物半导体薄膜，其通过优化铟，锡和锌的量，其不溶于磷酸型蚀刻液并且可溶于草酸型蚀刻液，以及非晶氧化物半导体薄膜的制造方法。图像显示装置（1）包括玻璃基板（10），作为光控制元件的液晶（40），用于驱动液晶（40）的底栅型薄膜晶体管（1），像素电极（30）和对电极（50）。底栅型薄膜晶体管（1）中的非晶氧化物半导体薄膜（2）的载流子密度小于10 + 18cm-3，不溶于磷酸型蚀刻液，并且可溶在草酸型蚀刻液中。

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公开/公告号WO2008117810A1

专利类型
公开/公告日2008-10-02

原文格式PDF
申请/专利权人 IDEMITSU KOSAN CO. LTD.;YANO KOKI;INOUE KAZUYOSHI;
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申请/专利号WO2008JP55634
发明设计人 YANO KOKI;INOUE KAZUYOSHI;
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申请日2008-03-26
分类号H01L29/786;C23C14/08;C23C14/34;G09F9/30;H01L21/306;H01L21/336;H01L21/363;H01L51/50;H05B33/14;
国家 WO
入库时间 2022-08-21 19:57:03

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