首页> 外国专利> CMOS INTEGRATED PROCESS FOR FABRICATING MONOCRYSTALLINE SILICON MICROMECHANICAL ELEMENTS BY POROUS SILICON MICROMACHINING AND SENSOR CHIP COMPRISING SUCH ELEMENT

CMOS INTEGRATED PROCESS FOR FABRICATING MONOCRYSTALLINE SILICON MICROMECHANICAL ELEMENTS BY POROUS SILICON MICROMACHINING AND SENSOR CHIP COMPRISING SUCH ELEMENT

机译:通过多孔硅微细化和包含这种元素的传感器芯片制造单晶硅微机械元素的CMOS集成工艺

摘要

The invention relates to a process for fabricating a monocrystalline silicon micromechanical element integrated with a CMOS circuit element within the CMOS technology. A portion of the surface layer of a monocrystalline substrate is selectively doped and a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology. Then, parts of the substrate underlying the selectively doped portion are etched porous through an exposed portion of the surface. Thereby, a buried sacrificial layer is formed. As a next step, metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer.
机译:本发明涉及一种在CMOS技术内制造与CMOS电路元件集成在一起的单晶硅微机械元件的方法。通过CMOS技术的已知步骤,选择性地掺杂单晶衬底的一部分表面层,并在衬底内制造CMOS电路元件。然后,穿过表面的暴露部分将被选择性掺杂的部分下面的衬底的部分多孔地蚀刻。由此,形成掩埋的牺牲层。下一步,形成通过CMOS技术的已知步骤的电路元件的金属接触件。最后,通过化学溶解所述多孔硅牺牲层来形成微机械元件。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号