FORMATION OF SILICIDED SHALLOW JUNCTIONS USING IMPLANT THROUGH METAL TECHNOLOGY AND LASER ANNEALING PROCESS

• 1. 形成金属硅化物的退火工艺、装置及金属接触层形成方法 [P] . 中国专利： CN111785622A . 2020-10-16
• 2. 一种同时形成硅化物和浅结的方法 [P] . 中国专利： CN1319127C . 2007.05.30
• 3. FORMATION OF SILICIDED SHALLOW JUNCTIONS USING IMPLANT THROUGH METAL TECHNOLOGY AND LASER ANNEALING PROCESS [P] . SG98447A1 . 2003-09-19

  机译： 贯穿金属技术和激光退火工艺的硅化浅结的形成

• 4. Formation of silicided shallow junctions using implant through metal technology and laser annealing process [P] . 美国专利： US6624489B2 . 2003-09-23

  机译： 使用金属技术和激光退火工艺通过注入形成硅化浅结

• 5. Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process [P] . 美国专利： US6365446B1 . 2002-04-02

  机译： 使用金属技术和激光退火工艺通过注入形成硅化的超浅结

• 1. Processing,microstructure and properties of laser cladding refractory Mo—Si metal silicide high—temperature composite coatings（38—39） [J] . XuZiwen, RuanZhongjian 中国耐火材料：英文版 . 2003,第002期
• 2. Optimization of Pulse Laser Annealing to Increase Sharpness of Implanted-junction Rectifier in Semiconductor Heterostructure [J] . E.L.Pankratov 纳微快报：英文版 . 2010,第004期
• 3. Signal processing for real-time identification of similar metals by laser-induced breakdown spectroscopy [J] . Sungho SHIN, Youngmin MOON, Jaepil LEE, 等离子体科学和技术（英文版） . 2019,第003期
• 4. FORMATION AND CHARACTERIZATION OF NICKEL SILICIDED SHALLOW N~+P JUNCTIONS USING IMPLANTATION THROUGH SILICIDE AND LOW TEMPERATURE FURNACE ANNEALING [C] . Chao-Chun Wang, Mao-Chieh Chen Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US) . 2004
• 5. Nano-structured silicide formation by focused ion beam implantation and integration of silver metallization with thin film silicide layers. [D] . Mitan, Martin M. 2003
• 6. Modeling of Catalytic Centers Formation Processes during Annealing of Multilayer Nanosized Metal Films for Carbon Nanotubes Growth [O] . Oleg I. Il’in, Nikolay N. Rudyk, Alexandr A. Fedotov, 2020
• 7. Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies [O] . Kuang Kian Ong -1
• 8. Ion Implantation Technique for Simultaneous Formation of a Shallow Silicon p-n Junction and a Shallow Silicide-Silicon Ohmic Contact. [R] . Tsaur, B. Y., Anderson, C. H. 1983

• 1. Effect of Annealing Temperature on the Formation of Silicides and the Surface Morphologies of PtSi Films [J] . Jinghua YIN ,Meicheng LI ,Yufeng ZHENG . 材料科学技术：英文版 . 2001,第1期
• 2. Advanced Metallic Materials Research and Processing Technology Center,South China University of Technology [J] . . 中国铸造 . 2004,第001期
• 3. MEVVA源离子注入在PN结上合成金属硅化物及其对PN结特性的影响 [C] . 梁宏 ,张通和 . 第三届中国功能材料及其应用学术会议 . 1998
• 4. 激光-感应复合熔覆金属硅化物基复合层的技术基础研究 [A] . 王邓志 . 2014