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METHODS OF FORMING DUAL-DAMASCENE INTERCONNECT STRUCTURES USING ADHESION LAYERS HAVING HIGH INTERNAL COMPRESSIVE STRESS AND STRUCTURES FORMED THEREBY

机译:利用具有高内部压缩应力的粘结层形成双金属互连结构的方法及由此形成的结构

摘要

METHODS OF FORMING DUAL-DAMASCENE INTERCONNECT STRUCTURES USING ADHESION LAYERS HAVING HIGH INTERNALCOMPRESSIVE STRESS AND STRUCTURES FORMED THEREBY Abstract of the DisclosureMethods of forming interconnect structures include forming a first metal wiring pattern on a first dielectric layer and forming a capping layer (e.g., SiCN layer) on the first copper wiring pattern. An adhesion layer is deposited on the capping layer, using a first source gas containing octamethylcyclotetrasilane (OMCTS) at a volumetric flow rate in a range from about 500 sccm to about 700 sccm and a second gas containing helium at a volumetric flow rate in a range from about 1000 to about 3000 sccm. The goal of the deposition step is to achieve an adhesion layer having an internal compressive stress of greater than about 150 MPa therein, so that the adhesion layer is less susceptible to etching/cleaning damage and moisture absorption during back-end processing steps. Additional dielectric and metal layers are then deposited on the adhesion layer.Fig. 2C
机译:形成双大马士革互连的方法使用具有较高内部强度的粘合层的结构由此产生的压应力和结构披露摘要形成互连结构的方法包括形成第一第一介电层上的金属布线图案并形成覆盖层在第一铜布线图案上的(例如,SiCN层)。粘附层是使用包含以下成分的第一原料气沉积在覆盖层上八甲基环四硅烷(OMCTS)的体积流量在约500 sccm至约700 sccm,第二种气体氦气的体积流量范围从大约1000到大约3000sccm。沉积步骤的目的是获得粘附层具有大于约150 MPa的内部压应力因此,粘附层不易被蚀刻/清洁在后端处理步骤中损坏和吸收水分。然后在粘合层上沉积额外的介电层和金属层层。图2C

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