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首页> 外国专利> Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage

Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage

机译：等离子体浸没离子注入系统，包括具有低解离和最低最小等离子体电压的等离子体源

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A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.
机译：一种用于处理工件的系统，包括：等离子体浸没离子注入反应器，其具有具有侧壁和顶棚并限定腔室的外壳;以及位于腔室内的工件支承台，该工件支承台具有面向顶棚并限定延伸的处理区域。通常在整个晶片支撑座上，并由侧壁横向限制，并在轴向上限制在工件支撑座和顶棚之间。该外壳在处理区域的大致相对的侧面上具有至少第一对开口，以及在腔室外部的第一中空导管，该第一中空导管具有连接到第一对开口中的各个开口的第一端和第二端，从而提供第一凹入路径延伸穿过导管并跨越过程区域。该反应器还包括在反应器的内表面上或附近的气体分配装置，用于将包含要离子注入的第一物质的处理气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体在房间里。该系统还包括第二晶片处理设备和晶片传送设备，用于在等离子体浸没注入校正器和第二晶片处理设备之间传送工件。

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