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Selective etching processes of SiO2 , Ti and In2 O3 thin films for FeRAM device applications
Selective etching processes of SiO2 , Ti and In2 O3 thin films for FeRAM device applications
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机译：FeRAM器件应用中的SiO 2 ，Ti和In 2 O 3 薄膜的选择性刻蚀工艺
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摘要
A method of selectively etching a three-layer structure consisting of SiO2, In2O3, and titanium, includes etching the SiO2, stopping at the titanium layer, using C3F8 in a range of between about 10 sccm to 30 sccm; argon in a range of between about 20 sccm to 40 sccm, using an RF source in a range of between about 1000 watts to 3000 watts and an RF bias in a range of between about 400 watts to 800 watts at a pressure in a range of between about 2 mtorr to 6 mtorr; and etching the titanium, stopping at the In2O3 layer, using BCl in a range of between about 10 sccm to 50 sccm; chlorine in a range of between about 40 sccm to 80 sccm, a Tcp in a range of between about 200 watts to 500 watts at an RF bias in a range of between about 100 watts to 200 watts at a pressure in a range of between about 4 mtorr to 8 mtorr.
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机译：一种选择性刻蚀由SiO 2 ，In 2 O 3 和钛组成的三层结构的方法，包括刻蚀SiO 2 ，使用C 3 F 8 在钛层处停止，范围约为10 sccm至30 sccm;氩气在约20 sccm到40 sccm的范围内，使用RF光源在约1000瓦特到3000瓦特的范围内，并且RF偏压在约400瓦特到800瓦特的范围内，压力在在大约2毫托到6毫托之间;使用约10sccm至50sccm的BCl蚀刻钛，并止于In 2 O 3 层;氯在约40 sccm至80 sccm的范围内，T cp 在RF偏压下约200瓦至500瓦的范围内，压力在约4mtorr至8mtorr之间的范围内。
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