MAGNETO-RESISTANCE EFFECT ELEMENT HAVING FREE LAYER INCLUDING MAGNETOSTRICTION REDUCTION LAYER AND THIN-FILM MAGNETIC HEAD

• 1. 磁阻效应元件、薄膜磁头、磁头万向节组件和硬盘装置 [P] . 中国专利： CN101174420B . 2010.11.24
• 2. 磁阻效应元件、薄膜磁头、磁头万向节组件和硬盘装置 [P] . 中国专利： CN101174420A . 2008-05-07
• 3. Magneto-resistance effect element having free layer including magnetostriction reduction layer and thin-film magnetic head [P] . 美国专利： US7760475B2 . 2010-07-20

  机译： 具有包括磁致伸缩减少层和薄膜磁头的自由层的磁阻效应元件

• 4. MAGNETORESISTANCE ELEMENT HAVING FREE LAYER INCLUDING MAGNETOSTRICTION REDUCTION LAYER, AND THIN FILM MAGNETIC HEAD [P] . 日本专利： JP2008227457A . 2008-09-25

  机译： 具有自由层的磁阻元件，包括减磁层和薄膜磁头

• 5. Magneto-resistance effect element and thin-film magnetic head having non-magnetic spacer layer composed of one semiconductor layer and two metal layers [P] . 美国专利： US7764470B2 . 2010-07-27

  机译： 具有由一个半导体层和两个金属层组成的非磁性间隔层的磁阻效应元件和薄膜磁头

• 1. Electromagnetic Scattering by a Chiral Grating in a Homogeneous Chiral Environment and its Finite Element Method with Perfectly Matched Absorbing Layers [J] . Deyue Zhang, Fuming Ma 高等学校计算数学学报（英文版） . 2006,第002期
• 2. Magnetic Properties of Ferromagnetic Double Layers with Ferrimagnetic Interlayer Coupling at Zero Temperature [J] . JIANG Wei, ZHU Cheng-Bo, WANG Wei, 理论物理通讯（英文版） . 2009,第002期
• 3. Layered thin-film magnetic structures as a basis of spintronic element base [C] . Kazakov, G.T., Veselov, . 2002
• 4. Development of a nonlinear quadrilateral layered membrane element with drilling degrees of freedom and a nonlinear quadrilateral thin flat layered shell element for the modeling of reinforced concrete walls. [D] . Rojas Barrales, Fabian. 2012
• 5. Robust In-Zn-O Thin-Film Transistors with aBilayer Heterostructure Design and a Low-Temperature Fabrication ProcessUsing Vacuum and Solution Deposited Layers [O] . Sang Yun Bang, Felix C. Mocanu, Tae Hoon Lee, 2020
• 6. Free-Energy Barriers and Reaction Mechanisms for the Electrochemical Reduction of CO on the Cu(100) Surface, Including Multiple Layers of Explicit Solvent at pH 0 [O] . Cheng Tao, Xiao Hai, Goddard William A. III 2015

• 1. Electron Energy in Nanoheterostructure, Including Unmagnetic and Magnetic Layers [J] . С. С. Tovstyuk ,V. I. Zavarynskyi ,M. S. Mantoshko . 微观物理学期刊（英文） . 2013,第3期
• 2. 86 TMR at 4.2 K for Amorphous Magnetic-Tunnel-Junctions with Co_(60)Fe_(20)B_(20) as Free and Pinned Layers [J] . Rehana Sharif . 材料科学技术：英文版 . 2005,第3期
• 3. Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers [J] . Hiroki Nakaie ,Tetsuji Arai ,Chiaya Yamamoto . 材料科学与化学工程（英文） . 2017,第1期
• 4. 反铁磁层在巨磁阻抗效应中的作用 [C] . 张娟 ,杨秀芳 ,阮建中 . 第七届华东三省一市真空学术交流会 . 2011
• 5. 隧穿磁阻磁头中CoPt硬磁偏置层的可靠性研究 [A] . 陈广伦 . 2008