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The photosemiconductor component which uses the optical succession between the ZnO hetero structural sub bands
The photosemiconductor component which uses the optical succession between the ZnO hetero structural sub bands
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机译：使用ZnO异质结构子带之间的光学序列的光半导体组件
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摘要
Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film and utilizes optical transitions between subbands in the quantum well structure. An element of this device can be formed as a film ON a transparent substrate or a plastic substrate at a temperature of 200 DEG C or lower. The quantum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3 (AO) m, whercin R = Sc or In, M = In, Fe, Cr, Ga or Al and A - Zn, Mg, Cu, Mn, Fe, Co, Ni or Cd and m = a natural number; or (Li and Na) (Ga and Al) O2. The optical semiconductor device is capable of using a transparent or plastic substrate as its substrate and achieving a high-efficient wide-band light-emitting or receiving device and an ultrafast optical moderation or switching applicable to an optical communication system requiring one terabit/sec or more of data transmission speed. IMAGE
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