首页> 外国专利> SOLID OXIDE THIN FILM, FORMING METHOD OF SOLID OXIDE THIN FILM, SOLID OXIDE FUEL CELL USING SOLID OXIDE THIN FILM, AND SOLID OXIDE STEAM ELECTROLYTIC DEVICE

SOLID OXIDE THIN FILM, FORMING METHOD OF SOLID OXIDE THIN FILM, SOLID OXIDE FUEL CELL USING SOLID OXIDE THIN FILM, AND SOLID OXIDE STEAM ELECTROLYTIC DEVICE

机译：固体氧化物薄膜，固体氧化物薄膜的形成方法，使用固体氧化物薄膜的固体氧化物燃料电池和固体氧化物蒸汽电解装置

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摘要

PPROBLEM TO BE SOLVED: To provide a solid oxide thin film improved ion conductivity and a forming method of the solid oxide thin film. PSOLUTION: The solid oxide thin film is formed by depositing a solid oxide on an anode 3 by RF magnetron sputtering without interposing an intermediate layer, and heat-treating without forming a reaction layer between the anode and the solid oxide. The forming method of the solid oxide thin film has a process depositing lanthanum gallate on the anode 3 by RF magnetron sputtering; and a process heat-treating the anode 3 on which lanthanum gallate is deposited at temperature less than 1,200C. PCOPYRIGHT: (C)2009,JPO&INPIT

机译：

要解决的问题：提供改善了离子导电性的固体氧化物薄膜以及该固体氧化物薄膜的形成方法。

解决方案：通过在不插入中间层的情况下通过RF磁控管溅射在阳极3上沉积固体氧化物并在阳极和固体氧化物之间不形成反应层的情况下进行热处理来形成固体氧化物薄膜。固体氧化物薄膜的形成方法具有通过RF磁控溅射在阳极3上析出没食子酸镧的工序。然后在低于1200℃的温度下对沉积有没食子酸镧的阳极3进行热处理。

版权：（C）2009，日本特许厅＆INPIT 展开▼

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公开/公告号JP2008243743A

专利类型
公开/公告日2008-10-09

原文格式PDF
申请/专利权人 UNIV OF TOKYO;
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申请/专利号JP20070086068
发明设计人 SASAKI KAZUYA;MURANAKA MINORU;
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申请日2007-03-28
分类号H01M8/02;H01M8/12;C25B1/02;
国家 JP
入库时间 2022-08-21 20:22:32

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