首页> 外国专利> Nanostructure e.g. silicon nanostructure, for use in nanoelectronics field, has silver deposits that cover structure e.g. atomic lines of silicon, and cover silicon atoms of silicon carbide surface and silicon lines formed on surface

Nanostructure e.g. silicon nanostructure, for use in nanoelectronics field, has silver deposits that cover structure e.g. atomic lines of silicon, and cover silicon atoms of silicon carbide surface and silicon lines formed on surface

机译：纳米结构例如用于纳米电子领域的硅纳米结构具有覆盖结构例如银的银沉积物。硅原子线，并覆盖碳化硅表面的硅原子和在表面形成的硅线

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摘要

The nanostructure has a set of structures on a surface of a silicon carbide substrate (2). The structure is selected among quantum connection pads, atomic segments, atomic lines and aggregates. Silver deposits cover the structure e.g. atomic lines of silicon (8). The silver deposits are made such that it covers silicon atoms of a silicon carbide surface and silicon lines formed on the carbide surface, where the surface has a c-4 by 2 type reconstruction. The carbide surface is constituted of extremely dense atomic lines of silicon resting on a surface composed of silicon atoms. An independent claim is also included for a method of manufacturing a nanostructure.

机译：纳米结构在碳化硅衬底（2）的表面上具有一组结构。该结构选自量子连接垫，原子段，原子线和聚集体。银沉积物覆盖了结构，例如硅的原子线（8）。制备银沉积物，使其覆盖碳化硅表面的硅原子和在碳化物表面上形成的硅线，其中该表面具有通过2型重构的c-4。碳化物表面由位于硅原子组成的表面上的硅的极致密的原子线构成。还包括关于制造纳米结构的方法的独立权利要求。

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公开/公告号FR2896239A1

专利类型
公开/公告日2007-07-20

原文格式PDF
申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE ETABLISSEMENT PUBLIC A CARACTERE INDUSTRIEL ET COMMERCIAL;UNIVERSITE PARIS SUD (PARIS XI);
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申请/专利号FR20060050145
发明设计人 SOUKIASSIAN PATRICK;SILLY MATHIEU;CHARRA FABRICE;
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申请日2006-01-16
分类号B82B1;B82B3;H01L29/885;H01L47;
国家 FR
入库时间 2022-08-21 20:26:49

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