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Thin film transistor fabrication, for liquid crystal device, involves forming nanowires using source and drain electrodes as electrodeposition electrodes, and forming ohmic contact layer between wires and source and drain electrodes
Thin film transistor fabrication, for liquid crystal device, involves forming nanowires using source and drain electrodes as electrodeposition electrodes, and forming ohmic contact layer between wires and source and drain electrodes
The method involves depositing a metallic layer on a transparent insulating substrate (50) and forming an insulating layer (52) on a metallic block layer. The block layer is chemically etched to form a porous block and a drain electrode (62), and another metallic layer is deposited on the substrate. The latter metallic layer is chemically etched to form source and gate electrodes (61, 63). A set of nanowires (65) is formed by using the source and drain electrodes as electrodeposition electrodes. An ohmic contact layer is formed between the wires and the source and drain electrodes. Independent claims are also included for the following: (1) a liquid crystal display device; and (2) a method for fabricating a liquid crystal display device.
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