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Embodiments of trenches or wells having various destinations in a semiconductor substrate
Embodiments of trenches or wells having various destinations in a semiconductor substrate
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机译：在半导体衬底中具有各种目的地的沟槽或阱的实施例
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摘要
The method involves simultaneously etching trenches (4, 6) and wells (5). A silicon nitride layer (8) is deposited over an entire structure of the trenches and wells to cover walls and bottom of the trenches and wells. A thick silicon oxide layer (9) is deposited by non-conformal deposition over the entire structure for closing openings of the trenches and wells. The layer (9) is selectively opened according to subsequent processings.
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