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Excess temperature recognizing circuit arrangement for power transistor, has temperature sensor with parasitic diode structure, and unit evaluating current supplied to diode and temperature dependent voltage drop at diode
Excess temperature recognizing circuit arrangement for power transistor, has temperature sensor with parasitic diode structure, and unit evaluating current supplied to diode and temperature dependent voltage drop at diode
The arrangement has a temperature sensor with a parasitic diode structure and integrated in a semiconductor body (1). A bulk source diode (2) connects a load connection of the field-effect transistor with a bulk connection of the body. An evaluation unit is electrically connected with the diode via the bulk connection. The evaluation unit is designed such that the current supplied to the diode and temperature dependent voltage drop at the diode are evaluated, where direction of current flowing into the diode is provided such that the diode is operated in the flow direction.
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