首页>
外国专利>
Opto-electronic semiconductor chip e.g. light emitting diode chip, has contact layer, where electrical contact resistance of contact layer to connection layer is smaller than contact layer to barrier layer
Opto-electronic semiconductor chip e.g. light emitting diode chip, has contact layer, where electrical contact resistance of contact layer to connection layer is smaller than contact layer to barrier layer
The semiconductor chip has a contact layer (6) extended over a barrier layer (5) and over a connection layer (4) of a semiconductor layer sequence. The contact layer is connected with an active area in an electrically conducting manner over a connection area (7) of the connection layer. An electrical contact resistance of the contact layer to the connection layer is smaller than an electrical contact resistance of the contact layer to the barrier layer. The contact layer within a barrier area (8) is bordered on the barrier layer. An independent claim is also included for a method for manufacturing a contact structure for an opto-electronic semiconductor chip for generating radiation.
展开▼
