首页> 外国专利> Trench transistor, e.g. magnetoresistive transistor, for e.g. memory chip, has mesa region between marginal trenches, and marginal electrode structure set to potential lying between drain and source potentials, or to source potential

Trench transistor, e.g. magnetoresistive transistor, for e.g. memory chip, has mesa region between marginal trenches, and marginal electrode structure set to potential lying between drain and source potentials, or to source potential

机译：沟道晶体管，例如磁阻晶体管，例如存储芯片，在边缘沟槽之间具有台面区域，边缘电极结构设置为位于漏极和源极电势之间或源极电势之间的电势

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摘要

A transistor has a marginal trench structure below a marginal electrode structure and/or electrical marginal conducting structure. A mesa region (17) is provided between marginal trenches. A marginal electrode structure (16) isolated against a semiconductor body is embedded in the trench structure. The structure (16) is set to a potential, which lies between a drain potential and a source potential, or to the source potential. An independent claim is also included for a semiconductor component comprising a semiconductor body.

机译：晶体管具有在边缘电极结构和/或电边缘导电结构下方的边缘沟槽结构。在边缘沟槽之间提供台面区域（17）。相对于半导体主体隔离的边缘电极结构（16）嵌入在沟槽结构中。结构（16）被设置为位于漏极电势和源极电势之间的电势，或者被设置为源极电势。对于包括半导体本体的半导体部件也包括独立权利要求。

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公开/公告号DE102005028224A1

专利类型
公开/公告日2006-12-28

原文格式PDF
申请/专利权人 INFINEON TECHNOLOGIES AG;
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申请/专利号DE20051028224
发明设计人 POELZL MARTIN;RIEGER WALTER;
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申请日2005-06-17
分类号H01L29/78;H01L29/06;H01L21/76;
国家 DE
入库时间 2022-08-21 20:29:56

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