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Method for the filling of partially convex deep trenches or deep trenches with an edge steepness of 90° or greater and the process for the preparation of mos - field effect transistors and igbts
Method for the filling of partially convex deep trenches or deep trenches with an edge steepness of 90° or greater and the process for the preparation of mos - field effect transistors and igbts
Method for the filling of partially convex deep trenches or of deep trenches with a slope steepness of 90° or greater than for the production of power - - mos field effect transistors with a vertical channel and igbts with a vertical channel, wherein in each of a number of successive filling steps (i, iii) in each case an electrically conductive filler material (15, 16) have been previously vertically in a substrate (s) formed deep trenches (1, 2, 3) is filled in such a way that the trenches (1, 2, 3) with the filling material, however, are filled completely with cavities, characterized in that at each common boundary surface between each of the in the successive filling steps (i, iii) formed to give a homogeneous filling material layers (15, 16) of a not closed barrier (11) is produced in such a way that these distributed over each common boundary surface in the spatial extent locally narrowly limited microscopically or submicroscopically small barrier regions, on the one hand, a material transport and transport of the cavities of an inner homogeneous filling area to an outer homogeneous..
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