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VARIABLE RESISTANCE STRUCTURE, METHOD OF MANUFACTURING THE VARIABLE RESISTANCE STRUCTURE, PHASE-CHANGE MEMORY DEVICE HAVING THE VARIABLE RESISTANCE STRUCTURE, AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE
VARIABLE RESISTANCE STRUCTURE, METHOD OF MANUFACTURING THE VARIABLE RESISTANCE STRUCTURE, PHASE-CHANGE MEMORY DEVICE HAVING THE VARIABLE RESISTANCE STRUCTURE, AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE
The phase change memory device including a variable resistance structure, and it is disclosed. After forming the lower electrode, to form a variable resistance member including a top on the lower electrode having a lower portion, the central portion having a smaller area than the bottom and the bottom is substantially equal to the area. An upper electrode formed on the variable resistive element is formed. By improving the structure of the variable resistance member center portion has a smaller area than the upper and lower portions, the phase change region at a distance from the lower electrode is formed around the center portion of the variable resistance element. To the stress caused by the volume change of the variable resistor element caused by the phase change in the phase change process repeated prevented from being concentrated on the lower electrode can improve the reliability of the variable resistance structures. In addition, the heat required for the phase change is separated from the lower electrode and the interface between the variable resistance element because it occurs at the central part of the variable resistance element, is diffused into these columns, the constituent atoms of the lower electrode to the variable resistive element by the specific resistance of the variable resistance element it is possible to prevent the phenomenon of change. Furthermore, it is possible to reduce the high electric current having a phase transition of a conventional phase change memory device because it is opened only by the central part of the variable resistive element occurs.
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