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Reactive Porogen Based on Organic Noncyclic-polyol, and Ultra-low Dielectric Materials Prepared by Using It
Reactive Porogen Based on Organic Noncyclic-polyol, and Ultra-low Dielectric Materials Prepared by Using It
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机译：基于有机非环状多元醇的反应性成孔剂及其制备的超低介电材料
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摘要
A reactive porogen based on organic noncyclic-polyol, and ultra-low dielectric materials prepared by using the same porogen are provided not to remain carbon residue after semiconductor-manufacturing process, and produce ultra-low dielectric materials having enhanced mechanical properties based on the same porosity and small size of pores, so that the ultra-low dielectric materials are useful as interlayer insulating film of next generation semiconductor for copper wiring. The reactive porogen is prepared by replacing the terminal hydroxy group of organic noncyclic-polyol by alkylalkoxysilane, wherein the organic noncyclic-polyol is completely pyrolyzed at 350-500 deg.C not to remain carbon residue; and the organic noncyclic-polyol is erythritol represented by the formula(1): (HOH2C)3C-CH2-OR or petaerythritol organic compound represented by the formula(2): HOCH2[CH(OH)]nCH2OH, wherein R is H, CH2C(CH2OH)3 or CH2C(CH2OH)2CH2OCH2C(CH2OH3), and n is an integer from 2 to 4. The ultra-low dielectric material composition comprises 10-90 volume% of organic or inorganic silicate precursor as an organic silicate matrix and 10-90 volume% of the porogen as a porogenic template, wherein the matrix is polymethylsilsesquioxane monopolymer or copolymer. The ultra-low dielectric materials are prepared by preparing a thin layer with the ultra-low dielectric material composition, and sol-gel reacting and heat-treating the thin layer.
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