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NONVOLATILE FLASH MEMORY DEVICE COMPRISING FLOATING GATES UTILIZING ZNO NANOPARTICLES EMBEDDED IN THE POLYMER THIN FILMS AND MANUFACTURING METHOD THEREOF
NONVOLATILE FLASH MEMORY DEVICE COMPRISING FLOATING GATES UTILIZING ZNO NANOPARTICLES EMBEDDED IN THE POLYMER THIN FILMS AND MANUFACTURING METHOD THEREOF
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机译：包含浮选门的非易失性闪存器件，其利用聚合物薄膜中嵌入的Zno纳米粒子及其制造方法
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摘要
A nonvolatile flash memory device having a floating gate and its manufacturing method are provided to easily form a ZnO nano particle in a polymer thin film by using simple deposition and annealing without using an additional tunneling oxide layer. A substrate(110) has a drain region(165) and a source region(155). A polymer thin film(130) is formed on a channel region located at a center portion between the drain and the source regions. A ZnO nano particle(120) is embedded in the polymer thin film by oxidizing Zn deposited on the substrate. A drain electrode(160) is formed on the drain region. A source electrode(150) is formed on the source region. A gate electrode(140) is formed on the polymer thin film.
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