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Lithographic patterning using a high transmission attenuated phase-shift mask and multiple exposures of optimised coherence
Lithographic patterning using a high transmission attenuated phase-shift mask and multiple exposures of optimised coherence
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机译：使用高透射衰减相移掩模和多次曝光优化相干性的光刻图案
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摘要
A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.
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