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Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layers
Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layers
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机译：具有InGaAs压缩应变有源层，GaAsP拉伸应变阻挡层和InGaP光波导层的半导体激光器件
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摘要
In a semiconductor-laser device: a compressive-strain quantum-well active layer is made of Inx3Ga1. x3As1-y3Py3 (0x3 ≤ 0.4 and 0 ≤ y3 ≤ 0.1); tensile-strain barrier layers made of Inx2Ga1-x2As1-y2P1-y2 (0≤x20.49y2 and 0y20.4)are formed above and under the compressive-strain quantum-well active layer; and optical waveguide layers being made of either p-type or i-type In0.49Ga0.51P are formed above the upper tensile-strain barrier layer and under the lower tensile-strain barrier layer. Preferably, the absolute value of a sum of a first product and a second product is less than or equal to 0.25 nm, where the first product is a product of a strain and a thickness of said compressive-strain active layer, and the second product is a product of a strain of said lower and upper tensile-strain barrier layers and a total thickness of the lower and upper tensile-strain barrier layers.
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