首页>
外国专利>
METHOD OF FABRICATING A P-I-N LIGHT EMITTING DIODE USING CU-DOPED P-TYPE ZNO
METHOD OF FABRICATING A P-I-N LIGHT EMITTING DIODE USING CU-DOPED P-TYPE ZNO
展开▼
机译：用Cu掺杂的P型ZNO制造P-I-N发光二极管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed herein is a method of fabricating a p-i-n type light emitting diode using p-type ZnO, and particularly, a technique for fabricating a p-type ZnO thin film doped with copper, a light emitting diode manufactured using the same, and its application to electrical and magnetic devices. The method of fabricating a p-i-n type light emitting diode using p-type ZnO of the current invention includes depositing a low-temperature ZnO buffer layer on a sapphire single-crystal substrate, depositing an n-type gallium doped ZnO layer on the deposited low-temperature ZnO buffer layer, depositing an intrinsic ZnO thin film on the deposited n-type gallium doped ZnO layer, forming a p-type ZnO thin film layer on the deposited intrinsic ZnO thin film, forming a MESA structure on the p-type ZnO thin film layer through wet etching to obtain a diode structure, and subjecting the diode structure to post-heat treatment.
展开▼
