LOW TEMPERATURE SYNTHESIS OF HEXAGONAL ZNS NANOCRYSTALS AS WELL AS DERIVATIVES WITH DIFFERENT TRANSITION METAL DOPANTS USING THE SAID METHOD

• 1. ZnSe纳米晶的制备方法、ZnSe纳米晶及ZnSe缓冲层的制备方法 [P] . 中国专利： CN104495762B . 2018.01.19
• 2. ZnSe纳米晶的制备方法、ZnSe纳米晶及ZnSe缓冲层的制备方法 [P] . 中国专利： CN104495762A . 2015-04-08
• 3. LOW TEMPERATURE SYNTHESIS OF HEXAGONAL ZNS NANOCRYSTALS AS WELL AS DERIVATIVES WITH DIFFERENT TRANSITION METAL DOPANTS USING THE SAID METHOD [P] . 世界知识产权组织专利： WO2006135399A2 . 2006-12-21

  机译： 利用SAID法低温合成六角ZNS纳米晶和不同过渡金属掺杂的衍生物。

• 4. Temperature Synthesis of Hexagonal Zns Nanocrystals as Well as Derivatives with Different Transition Metal Dopants Using the Said Method [P] . 美国专利： US2008090394A1 . 2008-04-17

  机译： 用所述方法温度合成六边形Zns纳米晶及不同过渡金属掺杂剂的衍生物

• 5. Zn2SnO4 Low-temperature synthesis method of Zn2SnO4 [P] . 韩国专利： KR101755258B1 . 2017-07-07

  机译： Zn2SnO4的低温合成方法

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