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DEEP ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATING DEEP ULTRAVIOLET LIGHT EMITTING DEVICES
DEEP ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATING DEEP ULTRAVIOLET LIGHT EMITTING DEVICES
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机译：深紫外发光装置以及制造深紫外发光装置的方法
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摘要
Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least 4 % are provided. Wall plug efficiencies may be at least 5 % or at least 6 %. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least 2 % are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least 0.4 % are provided. Light emitting devices and method of fabricating light emitting devices having a peak output wavelength of not greater than 350 nm and an output power of at least 5 mW, having a peak outpu wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
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