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TRANSITION METAL-DOPED OXIDE SEMICONDUCTOR EXHIBITING ROOM-TEMPERATURE FERROMAGNETISM AND METHOD OF SENSING A GAS BY DETECTING CHANGE IN MAGNETIC PROPERTIES
TRANSITION METAL-DOPED OXIDE SEMICONDUCTOR EXHIBITING ROOM-TEMPERATURE FERROMAGNETISM AND METHOD OF SENSING A GAS BY DETECTING CHANGE IN MAGNETIC PROPERTIES
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机译：具有室温铁磁性能的过渡金属掺杂氧化物半导体及通过检测磁性能变化来检测气体的方法
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摘要
An oxide semiconductor doped with a transition metal and exhibiting room-temperature ferromagnetism is disclosed. The transition metal-doped oxide semiconductor is preferably manufactured in powder form, and the transition metal is preferably evenly distributed throughout the oxide semiconductor. The preferred embodiments are iron-doped tin dioxide and cobalt-doped tin dioxide. Gases may be detected by passing them across a material and measuring the change in magnetic properties of the material; the preferred material is iron-doped tin dioxide.
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