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首页> 外国专利> DEVELOPMENT OF A LOW-COST PROCESS FOR LARGE AREA, HIGH-PERFORMANCE, AMORPHOUS SILICON DOUBLE JUNCTION SOLAR CELL MODULES

DEVELOPMENT OF A LOW-COST PROCESS FOR LARGE AREA, HIGH-PERFORMANCE, AMORPHOUS SILICON DOUBLE JUNCTION SOLAR CELL MODULES

机译：低成本，大面积，高性能，非晶硅双结太阳能电池模块的低成本开发

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摘要

A process for producing a plasma-deposited multi junction soter celt device called an amorphous silicon solar cell module comprising. a plurality of plasma deposited amorpboua silicon soter cells consisting of; a transparent sheal glass plate coated with a transparent conductive oxide (TCO) layer by an atmospheric pressure chemical vapour deposition method; a number of fine screen printed lines and two wider bus bars of Ag frif on TCO and fired at a high temperafure for forming metallic confact to each of the individual cells on the glass substrate, a sequence of seven amorphous silicon layers and one micro crystalline silicon layer deposited in a single chamber at elevated substrate iemperatures, the process gases being diluted with hydrogen, an amorphous silicon carbide buffer layer with a graded band gap at the sensitive p/i interface produced by brief introduction of a carton containing process gas such as methane and relying on the continuous vacuum pumping to produce the desired band gap grading; removing traces of dopant gas from the single deposition chamber by alternate purging with hydrogen gas and vacuum pumping, forming 3 microcrystalilne silicon layer such that it form a recombination junction with the p layer of the next junction, carrying out series interconnection of cells in the modute by firstly forming without breaking vacuum 9 back ohmic contact of sputtered silver film covering the entire module area and secondly removing the silver film from specific areas another screen printing and wei chemical etching so as to obtain the desired cell isolation and series interconnection of ceils.
机译：本发明涉及一种用于制造被称为非晶硅太阳能电池模块的等离子体沉积的多结Soter celt器件的方法。多个等离子体沉积的非晶硅硅silicon细胞，由以下组成：通过大气压化学气相沉积法涂覆有透明导电氧化物（TCO）层的透明板玻璃板;在TCO上的许多细丝网印刷线和两根较宽的Ag Frif母线，并在高温下烧制以形成与玻璃基板上每个单个电池的金属接触，依次形成七个非晶硅层和一个微晶硅在单室中以升高的基板温度淀积的碳层，工艺气体用氢气稀释，通过短暂引入含纸箱的工艺气体（例如甲烷）制成的，在灵敏的p / i界面处具有带隙逐渐变窄的非晶碳化硅缓冲层依靠连续的真空泵来产生所需的带隙分级;通过交替使用氢气吹扫和真空抽气从单个沉积室中去除痕量掺杂剂气体，形成3个微晶硅层，使其与下一个结的p层形成复合结，从而在模块中进行单元的串联互连通过首先在不破坏真空的情况下形成9个覆盖整个模块区域的溅射银膜的背面欧姆接触，其次从另一区域去除银膜，再进行丝网印刷和化学蚀刻，以获得所需的电池隔离和电池的串联互连。

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