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Semiconductor device having read and write operations corresponding to read and write row control signals
Semiconductor device having read and write operations corresponding to read and write row control signals
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机译：具有与读和写行控制信号相对应的读和写操作的半导体器件
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摘要
In a semiconductor device that needs a refresh operation for storing data, data of memory cells selected in response to a row address is read to main amplifiers through bit line pairs, sense amplifiers and data line pairs in a page-mode read operation. Thereafter, while outputting the data held in the main amplifiers to the outside, connecting transistors are turned off so as to disconnect the main amplifiers from the memory cells, and thus, the memory cells can be precharged. Also, in a page-mode write operation, while writing externally supplied input data in the main amplifiers, the memory cells can be precharged.
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