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Bandgap reference designs with stacked diodes, integrated current source and integrated sub-bandgap reference
Bandgap reference designs with stacked diodes, integrated current source and integrated sub-bandgap reference
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机译：带叠层二极管，集成电流源和集成子带隙基准的带隙基准设计
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摘要
The performance of a bandgap reference circuit is improved by increasing the ΔVBE, and thereby correspondingly decreasing the input sensitivity of the error amplifier in the control loop. The ΔVBE can be increased by presenting stacked diode configurations at the amplifier inputs, by increasing the diode ratio presented at the amplifier inputs, and by providing a higher current in the CTAT leg than in the PTAT leg. The stacked diode configuration is achieved by producing isolated diodes with a triple well CMOS process. The stacked diode configuration and the triple well CMOS process also permit the input stage of the amplifier to use N-channel transistors operating in the threshold region.
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