Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETs

• 1. 一种基于栅控漏极产生电流提取MOSFET平带电压和阈值电压的方法 [P] . 中国专利： CN102692543B . 2015.03.18
• 2. 一种基于栅控漏极产生电流提取MOSFET平带电压和阈值电压的方法 [P] . 中国专利： CN102692543A . 2012-09-26
• 3. Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs [P] . 美国专利： US2006263964A1 . 2006-11-23

  机译： 减少薄栅氧化物MOSFET中的栅感应漏漏电流的方法和装置

• 4. Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs [P] . 美国专利： US6693012B2 . 2004-02-17

  机译： 减少薄栅氧化物MOSFET中的栅感应漏漏电流的方法和装置

• 5. METHOD AND DEVICE TO REDUCE GATE-INDUCED DRAIN LEAKAGE (GIDL) CURRENT IN THIN GATE OXIDE MOSFETS [P] . SG94989A1 . 2003-04-23

  机译： 减小薄栅氧化层MOSFET中栅诱导的漏电流的方法和装置

• 1. Gate leakage current of NMOSFET with ultra-thin gate oxide [J] . HU Shi-gang, WU Xiao-Feng, XI Zai-fang 中南大学学报（英文版） . 2012,第011期
• 2. FORWARD GATED-DIODE R-G CURRENT METHOD:A SIMPLE NOVEL TECHNIQUE FOR CHARACTERIZING LATERAL LIGHTLY DOPING REGION OF LDD MOSFET's [J] . He Jin, Huang Aihua, Zhang Xing, 电子科学学刊（英文版） . 2001,第002期
• 3. Elimination of ESD Events and Optimizing Waterjet Deflash Process for Reduction of Leakage Current Failures on QFN-mr Leadframe Devices [J] . Frederick Ray I.Gomez, Tito T.Mangaoang Jr. 电气工程：英文版 . 2018,第004期
• 4. Investigation of Gate-Induced Drain Leakage Current in Ultra-thin Gate Oxide LDD nMOSFET's [C] . Haifeng Chen, Yue Hao, Zhiwei Zhu, International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN) . 2006
• 5. Modeling the current-voltage (I-V) characteristics of the MOSFET device with quantum mechanical effects due to thin oxide near silicon/silicon dioxide interface using asymptotic methods. [D] . Abebe, Henok. 2002
• 6. Mesostructured HfO2/Al2O3 CompositeThin Films with Reduced Leakage Current for Ion-ConductingDevices [O] . Mohamed Barakat Zakaria, *, Takahiro Nagata, 2019
• 7. Stress-induced leakage current in dual-gate CMOSFETS with thin nitrided gate oxides [O] . HUANG JINSHENG 2005
• 8. Gate-Induced Drain Leakage Current in MOS Devices [R] . Nathan, V., Das, N. C. 1993

• 1. Gate leakage current of NMOSFET with ultra-thin gate oxide [J] . 胡仕刚 ,吴笑峰 ,席在芳 . 中南大学学报 . 2012,第011期
• 2. Can intraluminal devices prevent or reduce colorectal anastomotic leakage:A review [J] . Annelien N Morks ,Klaas Havenga ,Rutger J Ploeg . 世界胃肠病学杂志：英文版 . 2011,第40期
• 3. 薄栅N-MOSFEET中的栅感应漏端漏电流(GIDL)的初步研究 [C] . 杨存宇 ,谭长存 . 第十一届全国半导体集成电路、硅材料学术会议 . 1999
• 4. 4H-SiC MOSFET栅泄漏电流及其低频噪声研究 [A] . 秦宇 . 2018