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Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

机译：垂直结场效应晶体管，以及制造垂直结场效应晶体管的方法

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摘要

A vertical JFET 1a according to the present invention has an n⁺ type drain semiconductor portion 2, an n-type drift semiconductor portion 3, a p⁺ type gate semiconductor portion 4, an n-type channel semiconductor portion 5, an n⁺ type source semiconductor portion 7, and a p⁺ type gate semiconductor portion 8. The n-type drift semiconductor portion 3 is placed on a principal surface of the n⁺ type drain semiconductor portion 2 and has first to fourth regions 3a to 3d extending in a direction intersecting with the principal surface. The p⁺ type gate semiconductor portion 4 is placed on the first to third regions 3a to 3c of the n-type drift semiconductor portion 3. The n-type channel semiconductor portion 5 is placed along the p⁺ type gate semiconductor portion 4 and is electrically connected to the fourth region 3d of the n-type drift semiconductor portion 3.

机译：根据本发明的垂直JFET 1 a 具有n ^{+ 型漏极半导体部分 2 ，n型漂移半导体部分 3 ，ap ^{+ 型栅极半导体部分 4 ，n型沟道半导体部分 5 ，n ^{+ 型源半导体部分 7 和ap ^{+ 型栅极半导体部分 8 。 n型漂移半导体部分 3 放置在n ^{+ 型漏极半导体部分 2 的主表面上，并具有第一至第四区域 3 a 到 3 d 沿与主表面相交的方向延伸。 p ^{+ 型栅极半导体部分 4 放置在第一至第三区域 3 a 至 n型漂移半导体部分 3 的3 c 。 n型沟道半导体部分 5 沿着p ^{+ 型栅极半导体部分 4 放置，并电连接到第四区域 3的> 3 d 。}}}}}}} 展开▼

著录项

公开/公告号US7282760B2

专利类型

公开/公告日2007-10-16

原文格式PDF

申请/专利权人 TAKASHI HOSHINO;SHIN HARADA;KAZUHIRO FUJIKAWA;SATOSHI HATSUKAWA;KENICHI HIROTSU;
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申请/专利号US20050522278

发明设计人 SHIN HARADA;SATOSHI HATSUKAWA;TAKASHI HOSHINO;KAZUHIRO FUJIKAWA;KENICHI HIROTSU;
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申请日2003-07-24

分类号H01L29/76;

国家 US

入库时间 2022-08-21 21:03:24

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