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Reading Technique erase and improved in order to charge trapping non-volatile memory

机译：读取技术已擦除并改进，以便对非易失性存储器进行电荷捕获

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摘要

The present invention describes a method for operating an array of non-volatile charge trapping memory device. Before the step of block erase non-volatile memory devices of all, the method comprises the step of blocking the write to the nonvolatile memory device of substantially all of the array substantially in the array. An advantage of the present invention, by doing this it is to be used as a reference cell, a further charge trapping non-volatile memory device, the reference cell is programmed and erased by the block erase and block write of the memory cells in the array , therefore, the reference cell indicates the repetition of the same history and memory cells in the array. It is possible to use this property to adapt it to aging of the memory cell read parameters. In addition, the corresponding device is also provided.

机译：本发明描述了一种用于操作非易失性电荷捕获存储设备的阵列的方法。在全部阻止非易失性存储器件的块擦除的步骤之前，该方法包括以下步骤：阻止基本上在阵列中的基本上所有阵列对非易失性存储器件的写入。本发明的一个优点是，通过这样做，它可以用作参考单元，另一种电荷捕获非易失性存储器件，通过对存储单元中的存储单元进行块擦除和块写入来对参考单元进行编程和擦除。因此，参考单元指示阵列中相同历史记录和存储单元的重复。可以使用此属性使其适应存储单元读取参数的老化。此外，还提供了相应的设备。

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公开/公告号JP2007502489A

专利类型
公开/公告日2007-02-08

原文格式PDF
申请/专利权人コーニンクレッカフィリップスエレクトロニクスエヌヴィ;
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申请/专利号JP20060523097
发明设计人ミヒール、イェー．ファン、ドゥーレン;
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申请日2004-08-04
分类号G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L29/788;H01L29/792;H01L27/115;H01L27/10;
国家 JP
入库时间 2022-08-21 21:08:46

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