首页> 外国专利> SILICON OXIDE FILM DOPED WITH RARE EARTH (RE) INCLUDING NANO CRYSTALLINITY SILICON DEPOSITED BY SPUTTERING FOR APPLICATION TO ELECTROLUMINESCENT ELEMENT

SILICON OXIDE FILM DOPED WITH RARE EARTH (RE) INCLUDING NANO CRYSTALLINITY SILICON DEPOSITED BY SPUTTERING FOR APPLICATION TO ELECTROLUMINESCENT ELEMENT

机译：掺有稀土（稀土）的氧化硅膜，包括通过溅射沉积的纳米晶硅，用于电子发光元件

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摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an SRSO film doped with rare earth (RE) elements which uses nano crystallinity (nc) silicon particles.;SOLUTION: There are provided a supply process 702 of Si which is a first target and is embedded with a first RE element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymiun (Pr), or terbium (Tr), a supply process 704 of Si which is a second target, a simultaneous sputtering process 708 for first and second targets, a formation process 710 of an Si oxide (SRSO) film which contains much Si for a substrate and is doped with first RE element, and an annealing process 712 of an SRSO film which is doped with first RE element.;COPYRIGHT: (C)2007,JPO&INPIT

机译：解决的问题：提供一种制造掺杂有稀土（RE）元素的SRSO薄膜的方法，该薄膜使用纳米结晶度（nc）硅颗粒。解决方案：提供了作为第一靶材的Si的供应工艺702嵌入第一稀土元素，例如（Er），（Yb），铈（Ce），（Pr）或b（Tr），作为第二靶材的Si的供应过程704，同时溅射第一靶和第二靶的工艺708，包含大量Si的Si氧化物（SRSO）膜的形成工艺710，掺杂有第一RE元素的SRSO膜的退火工艺712以及掺杂有第一RE的SRSO膜的退火工艺712元素：;版权：（C）2007，日本特许厅和INPIT

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公开/公告号JP2007201451A

专利类型
公开/公告日2007-08-09

原文格式PDF
申请/专利权人 SHARP CORP;
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申请/专利号JP20060350640
发明设计人 YOSHI ONO;LI TINGKAI;BARROWCLIFF ROBERT A;SHIEN TEN SUU;GAO WEI;
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申请日2006-12-26
分类号H01L21/316;H05B33/14;C23C14/10;C23C14/34;C23C14/58;C09K11/08;C09K11/59;H05B33/10;
国家 JP
入库时间 2022-08-21 21:12:41

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