首页> 外国专利> ELECTRON BEAM EXPOSURE SYSTEM, ELECTRONIC BEAM DEFOCUS CORRECTION METHOD, AND MEASURING METHOD OF ELECTRON BEAM DEFOCUS

ELECTRON BEAM EXPOSURE SYSTEM, ELECTRONIC BEAM DEFOCUS CORRECTION METHOD, AND MEASURING METHOD OF ELECTRON BEAM DEFOCUS

机译:电子束曝光系统,电子束去偏校正方法及电子束去偏测量方法

摘要

PROBLEM TO BE SOLVED: To provide an electron beam exposure system, or its method, reducing defocusing on a sub-deflection region plane as well as a main deflection region plane.;SOLUTION: The electron beam exposure system comprises: a main deflector 214 and a sub deflector 212; and an alignment coil 210 for translating the position of electron beam 200 in the main deflector 214 and the sub deflector 212. When deflecting beam by the sub deflector 212, the electron beam 200 is shifted by the alignment coil 210 so that defocusing on a sample plane becomes minimum. When deflecting beam by the main deflector 214, focusing of the electron beam 200 is corrected so that defocusing on the sample plane becomes minimum.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种电子束曝光系统或其方法,以减少在次偏转区域平面和主偏转区域平面上的散焦。解决方案:电子束曝光系统包括:主偏转器214和子偏转器212;对准线圈210,用于平移主偏转器214和副偏转器212中的电子束200的位置。当子偏转器212偏转电子束时,电子束200被对准线圈210移动,从而散焦在样品上平面变为最小。当通过主偏转器214偏转电子束时,校正电子束200的聚焦,以使在样品平面上的散焦最小。COPYRIGHT:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP2007019061A

    专利类型

  • 公开/公告日2007-01-25

    原文格式PDF

  • 申请/专利权人 NUFLARE TECHNOLOGY INC;

    申请/专利号JP20050195847

  • 发明设计人 HATTORI SEIJI;YAZAWA TAKASHI;

    申请日2005-07-05

  • 分类号H01L21/027;H01J37/147;H01J37/21;H01J37/305;

  • 国家 JP

  • 入库时间 2022-08-21 21:12:44

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