首页> 外国专利> Opto-electronic component for controlling tunnel electron streams comprises a photonic crystal having a defect mode in its photonic band gap for photons with an energy such that electron transitions are induced

Opto-electronic component for controlling tunnel electron streams comprises a photonic crystal having a defect mode in its photonic band gap for photons with an energy such that electron transitions are induced

机译：用于控制隧道电子流的光电组件包括一个光子晶体，该光子晶体在其光子带隙中具有缺陷模式，该光子晶体的能量使光子能诱发电子跃迁

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摘要

Opto-electronic component comprises a photonic crystal having a defect mode (D) in its photonic band gap (PB) for photons with an energy such that electron transitions are induced.

机译：光电组件包括一个光子晶体，该光子晶体在其光子带隙（PB）中具有缺陷模式（D），用于具有能量的光子，从而感应出电子跃迁。

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公开/公告号DE202005014856U1

专利类型
公开/公告日2005-12-15

原文格式PDF
申请/专利权人 UNIVERSITAET DUISBURG-ESSEN;
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申请/专利号DE20052014856U
发明设计人
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申请日2005-09-20
分类号H01L49;
国家 DE
入库时间 2022-08-21 21:19:57

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