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Light emitting device e.g. LED, has layer of three-dimensional photonic crystals provided on light emitting semiconductor die and serving as index-matching interface layer between die and encapsulant
Light emitting device e.g. LED, has layer of three-dimensional photonic crystals provided on light emitting semiconductor die and serving as index-matching interface layer between die and encapsulant
The device has a layer of three-dimensional photonic crystals (110) provided on a light emitting semiconductor die (102) comprising periodically distributed voids. The layer of photonic crystals have an index of refraction that is equal to/greater than an index of refraction of an upper layer (116) of the die. The layer of photonic crystal serves as an index-matching interface layer between the die and an encapsulant. An independent claim is also included for a method for fabricating a light emitting device.
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