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Memory e.g. Ferroelectric RAM, unit, has areas arranged such that coercive voltages and remanent polarization are different so that structure formed by electrodes has hysteresis characteristics in polarization-voltage characteristics curve
Memory e.g. Ferroelectric RAM, unit, has areas arranged such that coercive voltages and remanent polarization are different so that structure formed by electrodes has hysteresis characteristics in polarization-voltage characteristics curve
The unit has a ferro electric region (4) extending in a section between capacitor electrodes. Another region extends in another section between the former and other two electrodes. Two areas are arranged such that two coercive voltages and remanent polarization in respective sections are different so that a capacitor structure formed by the electrodes has a level hysteresis characteristic in a polarization-voltage characteristics cure. Independent claims are also included for the following: (1) a ferroelectric random access memory circuit for storing of data with a ferroelectric memory unit (2) a method for storing of data in a ferroelectric memory unit.
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