首页> 外国专利> Strain-measuring method for measuring transverse strain in semiconductor material uses piezoresistive resistors sensitive to transverse and normal strains

Strain-measuring method for measuring transverse strain in semiconductor material uses piezoresistive resistors sensitive to transverse and normal strains

机译:用于测量半导体材料中横向应变的应变测量方法使用对横向应变和法向应变敏感的压阻电阻器

摘要

Transverse strain is measured via first (10) and second (20) piezoresistive resistors (PR) attached to a semiconductor material (SM). The PR are each sensitive to transverse and normal strains caused in SM. The PR are rotated against each other and opposite a crystal grating for the SM so that the PR sensitivity to normal strains is eliminated. An independent claim is also included for a device for measuring transverse strain in semiconductor material by means of piezoresistive resistors.
机译:通过连接到半导体材料(SM)的第一(10)和第二(20)压阻电阻(PR)测量横向应变。 PR均对SM中引起的横向和正常应变敏感。 PR彼此相对旋转,并与SM的晶体光栅相对,从而消除了PR对正常应变的敏感性。还包括一种用于通过压阻电阻测量半导体材料中的横向应变的装置的独立权利要求。

著录项

  • 公开/公告号DE102004030382A1

    专利类型

  • 公开/公告日2006-02-02

    原文格式PDF

  • 申请/专利权人 EADS DEUTSCHLAND GMBH;

    申请/专利号DE20041030382

  • 发明设计人 LENTNER KONRAD;

    申请日2004-06-23

  • 分类号G01L1/18;G01N33/20;G01B7/16;G01L1/22;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:55

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