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Strain-measuring method for measuring transverse strain in semiconductor material uses piezoresistive resistors sensitive to transverse and normal strains
Strain-measuring method for measuring transverse strain in semiconductor material uses piezoresistive resistors sensitive to transverse and normal strains
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机译:用于测量半导体材料中横向应变的应变测量方法使用对横向应变和法向应变敏感的压阻电阻器
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摘要
Transverse strain is measured via first (10) and second (20) piezoresistive resistors (PR) attached to a semiconductor material (SM). The PR are each sensitive to transverse and normal strains caused in SM. The PR are rotated against each other and opposite a crystal grating for the SM so that the PR sensitivity to normal strains is eliminated. An independent claim is also included for a device for measuring transverse strain in semiconductor material by means of piezoresistive resistors.
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